Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments

摘要

In this contribution, the correlation between fundamental interactionprocesses induced by radiation in silicon and observable effects which limitthe use of silicon detectors in high energy physics experiments is investigatedin the frame of a phenomenological model which includes: generation of primarydefects at irradiation starting from elementary interactions in silicon;kinetics of defects, effects at the p-n junction detector level. The effectsdue to irradiating particles (pions, protons, neutrons), to their flux, to theanisotropy of the threshold energy in silicon, to the impurity concentrationsand resistivity of the starting material are investigated as time, fluence andtemperature dependences of detector characteristics. The expected degradationof the electrical parameters of detectors in the complex hadron backgroundfields at LHC & SLHC are predicted.